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Bulletin I25177 rev. C 12/96
ST203S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
205A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST203S
205 85 320 5260 5510 138 126 1000 to 1200 20 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AB (TO-93)
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1
ST203S Series
Bulletin I25177 rev. C 12/96
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
10 ST203S 12 1200 1300 1000
VRSM , maximum non-repetitive peak voltage V
1100
I DRM/I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 580 570 520 370 50 VDRM 50 60
ITM 180 el 400 380 320 210 50 50 85 900 940 930 780 50 VDRM 60
o
ITM 100s 640 650 630 510 50 85 6180 2980 1730 890 50 V DRM 60
ITM
Units
4680 2150 1200 580 50 85 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST203S
205 85 320 5260 5510 4420 4630
Units
A C
Conditions
180 conduction, half sine wave DC @ 76C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
138 126 98 89 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1380
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST203S Series
Bulletin I25177 rev. C 12/96
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST203S
1.72 1.17 1.20 0.92
Units
Conditions
ITM= 600A, TJ = TJ max, t p = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I ), T J = TJ max.
T(AV)
m 0.87 600 1000 mA
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I
T(AV)
), TJ = TJ max.
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST203S
1000 0.79 Min 20 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST203S
500 40
Units
V/s mA
Conditions
T J = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST203S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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3
ST203S Series
Bulletin I25177 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST203S
-40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
280
TO-209AB (TO-93)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
20
2
3
3
S
4
12
5
P
6
F
7
J
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16/ x 1.5 - Reapplied dv/dt code (for t q test condition) - t q code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) dv/dt - tq combinations available
dv/dt (V/s) 20 20 CK tq(s) 25 CJ 30 CH 50 DK DJ DH 100 EK EJ EH 200 -FJ * FH 400 --HH
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number. All other types available only on request.
4
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ST203S Series
Bulletin I25177 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX. 4 (0.16) MAX. 8.5 (0.33) DIA.
(0 .3 9 .5 MI N.
4.3 (0.17) DIA.
7)
RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD C.S. 25mm 2
(0
.86
)M
IN .
Fast-on Terminals
AMP. 280000-1 REF-250
+I 210 (8.26)
90 (3.54) MIN.
RED SHRINK
220 (8.66) + 10 (0.39) WHITE SHRINK
38.5 (1 .52)
16 (0.63) MAX.
M AX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32
Case Style TO-209AB (TO-93)
3/4"-16UNF-2A * 35 (1.38) MAX.
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING FLAG TERMINALS
22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 (0.51)
80 ( 3.15) MAX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
ST203S Series
Bulletin I25177 rev. C 12/96
Maximum Allowable Case Temperature (C) 130 ST203S Series R thJC (DC) = 0.105 K/W 120
Maximum Allowable Case Temperature (C) 130 120 110
Conduction Period
ST203S Series R thJC (DC) = 0.105 K/W
110
Conduction Angle
100 90 30 80 70 0 50 100 150 200 250 60 90 120 180 DC 300 350
100
30 60 90 120 180
90
80 0 40 80 120 160 200 240 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
350
300 250 200 150 100 50
0
180 120 90 60 30 RMS Limit
SA R th
0. 2
0. 3
0. 4
0. 5
Conduction Angle 0.8
ST203S Series TJ = 125C 0 40 80 120 160 200
1.2 K/ W
240 25
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
16 0.
K/ W
0.1 W K/
K/ W
K/ W
K /W
K/W
W K/
= 8 0. 0 W K/ a el t -D R
50
75
100
125
Maximum Average On-state Power Loss (W)
500 450 400 350 300 250 200 RMS Limit
Conduction Period
DC 180 120 90 60 30
R
S th A
0. 1
=
K/
W
0. 08
0 .1
0.2
6K
K/ W
/W
-D
el
ta
0.3 K
K/W
/W K/W
R
0 .4
150
100
50 0 0 50 100 150
ST203S Series TJ = 125C
0.5 K/W 0 .8 K/ W
1.2 K/W
200
250
300
350 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST203S Series
Bulletin I25177 rev. C 12/96
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
5000 4500 4000 3500 3000 2500 2000 1
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
5500
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 5000 Of Conduction May Not Be Maintained. Initial TJ = 125C 4500 No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 ST203S Series
ST203S Series
10
100
2000 0.01
0.1 Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
Fig. 6 - Maximum Non-repetitive Surge Current
1 Steady State Value R thJC = 0.105 K/W (DC Operation) 0.1
10000 Instantaneous On-state Current (A) ST203S Series
1000
0.01 ST203S Series
TJ = 25C TJ = 125C 100 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
0.001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum Reverse Recovery Charge - Qrr (C)
ITM = 500 A
Maximum Reverse Recovery Current - Irr (A)
250 ST203S Series TJ = 125 C
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 10 - Reverse Recovery Current Characteristics
ITM = 500 A 300 A 200 A 100 A 50 A
200
300 A 200 A 100 A
150
100
50 A
50
ST203S Series TJ = 125 C
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
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ST203S Series
Bulletin I25177 rev. C 12/96
1E4
Peak On-state Current (A)
Snubber circuit R s = 47 ohms Cs = 0.22 F V D = 80% V DRM 1000 1500 500 400 200 100 50 Hz
1000 1500 2500 3000 500 400 200
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
100
50 Hz
1E3
2500 3000 5000 ST203S Series Sinusoidal pulse TC = 60C
5000 tp
tp
ST203S Series Sinusoidal pulse T C = 85C
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
1500 2500 3000 5000
1000
500
100 400 200
50 Hz
500 1000 1500
400 200 100
50 Hz
ST203S Series Trapezoidal pulse TC = 60C di/dt = 50A/s
2500 3000 5000 ST203S Series Trapezoidal pulse TC = 85C di/dt = 50A/s
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM 50 Hz 200 100
400 500 1000 1500 Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM ST203S Series Trapezoidal pulse TC = 85C di/dt = 100A/s
Peak On-state Current (A)
tp
1E3
1500 2500 3000
500 1000
400
50 Hz 200 100
tp
ST203S Series Trapezoidal pulse TC = 60C di/dt = 100A/s
2500 3000
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST203S Series
Bulletin I25177 rev. C 12/96
1E5
ST203S Series Rectangular pulse
Peak On-state Current (A)
tp
di/dt = 50A/s 20 joules per pulse 2 1 0.5 0.3 0.2 0.1 5 10
1E4
20 joules per pulse 1 2 4 7.5
1E3
0.1
0.4 0.2
1E2
tp
ST203S Series Sinusoidal pulse
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST203S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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